±0.3V Bulk-Driven Fully Differential Buffer with High Figures of Merit

A high performance bulk-driven rail-to-rail fully differential buffer operating from ±0.3V supplies in 180 nm CMOS technology is reported. It has a differential–difference input stage and common mode feedback circuits implemented with no-tail, high CMRR bulk-driven pseudo-differential cells. It operates in subthreshold, has infinite input impedance, low output impedance (1.4 kΩ), 86.77 dB DC open-loop gain, 172.91 kHz bandwidth and 0.684 μW static power dissipation with a 50-pF load capacitance. The buffer has power efficient class AB operation, a small signal figure of merit FOMSS = 12.69 MHzpFμW−1, a large signal figure of merit FOMLS = 34.89 (V/μs) pFμW−1, CMRR = 102 dB, PSRR+ = 109 dB, PSRR− = 100 dB, 1.1 μV/√Hz input noise spectral density, 0.3 mVrms input noise and 3.5 mV input DC offset voltage.Junta de Andalucía - Consejería de Economía, Conocimiento, Empresas y Universidades P18-FR-4317Agencia Estatal de Investigación - FEDER PID2019-107258RB-C3

Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).The application of the flipped voltage follower to implement two high-performance circuits is presented: (1) The first is a class AB cascode flipped voltage follower that shows an improved slew rate and an improved bandwidth by very large factors and that has a higher output range than the conventional flipped voltage follower. It has a small signal figure of merit FOMSS = 46 MHz pF/μW and a current efficiency figure of merit FOMCE = 118. This is achieved by just introducing an addi- tional output current sourcing PMOS transistor (P-channel Metal Oxide Semiconductor Field Effect Transistor) that provides dynamic output current enhancement and increases the quiescent power dissipation by less than 10%. (2) The other is a high-performance low-voltage current mirror with a nominal gain accuracy better than 0.01%, 0.212 Ω input resistance, 112 GΩ output resistance, 1 V supply voltage requirements, 0.15 V input, and 0.2 V output compliance voltages. These char- acteristics are achieved by utilizing two auxiliary amplifiers and a level shifter that increase the power dissipation just moderately. Post-layout simulations verify the performance of the circuits in a commercial 180 nm CMOS (Complementary Metal Oxide Semiconductor) technology

Class AB Voltage Follower and Low-Voltage Current Mirror with Very High Figures of Merit Based on the Flipped Voltage Follower

The application of the flipped voltage follower to implement two high-performance circuits is presented: (1) The first is a class AB cascode flipped voltage follower that shows an improved slew rate and an improved bandwidth by very large factors and that has a higher output range than the conventional flipped voltage follower. It has a small signal figure of merit FOMSS = 46 MHz pF/µW and a current efficiency figure of merit FOMCE = 118. This is achieved by just introducing an additional output current sourcing PMOS transistor (P-channel Metal Oxide Semiconductor Field Effect Transistor) that provides dynamic output current enhancement and increases the quiescent power dissipation by less than 10%. (2) The other is a high-performance low-voltage current mirror with a nominal gain accuracy better than 0.01%, 0.212 Ω input resistance, 112 GΩ output resistance, 1 V supply voltage requirements, 0.15 V input, and 0.2 V output compliance voltages. These characteristics are achieved by utilizing two auxiliary amplifiers and a level shifter that increase the power dissipation just moderately. Post-layout simulations verify the performance of the circuits in a commercial 180 nm CMOS (Complementary Metal Oxide Semiconductor) technology

Método de perturbación con transformada de Laplace para resolver problemas no lineales de múltiples soluciones, con condiciones a la frontera mixtas y Neumann

The field of differential equations has recently gained attention due to recent developments in science and technology. For this reason, the analysis for the use of new methodologies to solve them has become important. Based on the combination of Laplace Transform method (LT) and Perturbation Method (PM) this article proposes the Laplace transform-Perturbation Method (LT-PM) which finds its motivation on the application of LT to linear ordinary differential equations. The goal of this work is to propose a modification of PM - the LT-PM), in order to solve nonlinear perturbative problems with boundary conditions defined on finite intervals. The proposed methodology consisted on the application of LT to the differential equation to solve and then, assuming that its solutions can be expressed as a series of perturbative parameter powers. Thus, the solution of the problem is obtained by systematically applying the transformed inverse LT. The main results of this paper were shown through two case studies, where LT-PM is identified as potentially useful for finding multiple solutions to nonlinear problems. Additionally, the LT-PM enhances the applicability of PM, in some cases of mixed and Neumann boundary conditions, where PM is unsuitable to provide the results. With the purpose of verifying the accuracy of the obtained results, the Square Residual Error (SRE) was calculated. The resulting value was extremely low, which showed the precision and potential of LT-PM. We conclude that, although the proposed method resulted efficient for the case studies presented in this article, it is expected that LT-PM can be a potentially useful tool for other case studies. Particularly those related to the practical applications of science and engineering. El campo de las ecuaciones diferenciales ha cobrado auge en la actualidad por el desarrollo científico y tecnológico. Por esta situación, el estudio de nuevas metodologías para solucionarlas se ha vuelto importante. A partir de la combinación del método de Laplace Transform (LT) y el método de perturbación (PM) este trabajo presenta el método LT-PM, y su motivación se encuentra en la aplicación conocida de la LT a ecuaciones diferenciales ordinarias lineales. El objetivo de este trabajo fue presentar una modificación del método de perturbación (PM), el método de perturbación con transformada de Laplace (LT-PM), con el fin de resolver problemas perturbativos no lineales, con condiciones a la frontera definidas en intervalos finitos. La metodología consistió en aplicar LT a la ecuación diferencial por resolver y después de asumir que la solución de la misma se puede expresar como una serie de potencias de un parámetro perturbativo, se obtiene la solución del problema aplicando sistemáticamente la transformada inversa de Laplace. Los principales resultados de este trabajo se muestran a partir de dos casos de estudio presentados, donde se observa que LT-PM es potencialmente útil para encontrar soluciones múltiples de problemas no lineales. Además, LT-PM mejora la aplicabilidad del método de perturbación en algunos casos de condiciones a la frontera mixtas y de Neumann, donde PM simplemente no funciona. Con el fin de verificar la exactitud de los resultados obtenidos, se calculó su error residual cuadrático (SRE), el cual resultó muy bajo, de donde se dedujo su precisión y la potencialidad de LT-PM. Se concluye que si bien el método propuesto resulta eficiente en los casos particulares presentados, se espera que sea una herramienta potencialmente eficiente y útil para otros casos de estudio, particularmente, en aquellos relacionados con aplicaciones prácticas en ciencias e ingeniería

±0.3V Bulk-Driven Fully Differential Buffer with High Figures of Merit

A high performance bulk-driven rail-to-rail fully differential buffer operating from ±0.3V supplies in 180 nm CMOS technology is reported. It has a differential–difference input stage and common mode feedback circuits implemented with no-tail, high CMRR bulk-driven pseudo-differential cells. It operates in subthreshold, has infinite input impedance, low output impedance (1.4 kΩ), 86.77 dB DC open-loop gain, 172.91 kHz bandwidth and 0.684 μW static power dissipation with a 50-pF load capacitance. The buffer has power efficient class AB operation, a small signal figure of merit FOMSS = 12.69 MHzpFμW−1, a large signal figure of merit FOMLS = 34.89 (V/μs) pFμW−1, CMRR = 102 dB, PSRR+ = 109 dB, PSRR− = 100 dB, 1.1 μV/√Hz input noise spectral density, 0.3 mVrms input noise and 3.5 mV input DC offset voltage

Implementation of Power-Efficient Class AB Miller Amplifiers Using Resistive Local Common-Mode Feedback

An approach to implement single-ended power-efficient static class-AB Miller op-amps with symmetrical and significantly enhanced slew-rate and accurately controlled output quiescent current is introduced. The proposed op-amp can drive a wide range of resistive and capacitive loads. The output positive and negative currents can be much higher than the total op-amp quiescent current. The enhanced performance is achieved by utilizing a simple low-power auxiliary amplifier with resistive local common-mode feedback that increases the quiescent power dissipation by less than 10%. The proposed class AB op-amp is characterized by significantly enhanced large-signal dynamic, static current efficiency, and small-signal figures of merits. The dynamic current efficiency is 15.6 higher, the static current efficiency is 10.6 times higher, and the small-signal figure of merit is 2.3 times higher than the conventional class-A op-amp. A global figure of merit that determines an op-amp’s ultimate speed is 6.33 times higher than the conventional class A op-amp

Recent Progress of Nanogenerators for Green Energy Harvesting: Performance, Applications, and Challenges

Natural sources of green energy include sunshine, water, biomass, geothermal heat, and wind. These energies are alternate forms of electrical energy that do not rely on fossil fuels. Green energy is environmentally benign, as it avoids the generation of greenhouse gases and pollutants. Various systems and equipment have been utilized to gather natural energy. However, most technologies need a huge amount of infrastructure and expensive equipment in order to power electronic gadgets, smart sensors, and wearable devices. Nanogenerators have recently emerged as an alternative technique for collecting energy from both natural and artificial sources, with significant benefits such as light weight, low-cost production, simple operation, easy signal processing, and low-cost materials. These nanogenerators might power electronic components and wearable devices used in a variety of applications such as telecommunications, the medical sector, the military and automotive industries, and internet of things (IoT) devices. We describe new research on the performance of nanogenerators employing several green energy acquisition processes such as piezoelectric, electromagnetic, thermoelectric, and triboelectric. Furthermore, the materials, applications, challenges, and future prospects of several nanogenerators are discussed